1 research outputs found
Modeling and simulations of beam stabilization in edge-emitting broad area semiconductor devices
A 2+1 dimensional PDE traveling wave model describing spatial-lateral
dynamics of edge-emitting broad area semiconductor devices is considered. A
numerical scheme based on a split-step Fourier method is presented and
implemented on a parallel compute cluster. Simulations of the model equations
are used for optimizing of existing devices with respect to the emitted beam
quality, as well as for creating and testing of novel device design concept